The main features and performance indicators of HBM2E are as follows: Speed and Capacity: HBM2E is designed to provide faster speeds, greater capacity and lower power consumption than HBM2. For example, the HBM2E product produced by SK hynix can process data at 3.6GB per second per pin, with an overall data processing speed of over 460GB per second and a capacity of 16GB. Bandwidth and power consumption: Compared to traditional GDDR memory (widely used in gaming graphics cards), HBM is designed to provide higher bandwidth and lower power consumption. The maximum bandwidth provided by HBM2E is up to 410 GBps. Technological innovation: The high performance of HBM2E is due to its unique inter-chip transmission data structure. Using TSV technology, multiple DRAM chips are stacked vertically and columnar paths are established that penetrate the entire layer of silicon to transmit commands and data. Application fields: HBM2E is widely used in fields that require high-performance computing, such as servers, high-performance computing (HPC), networks, and client spaces. Production and development: Mainly produced by companies such as Samsung and SK Hynix. At present, the development of HBM has entered the HBM3 stage, and it is expected to further improve performance.
Capacity: 16Gb
Architecture: 1024
Rate: 3.6Gbs
Refresh: 32ms