Description
$Quote1 Piece(MOQ)1 Piece(MOQ)
Description
- U.2 2.5″
- 1.9TB
- PCIe Gen 3.0 x4, NVMe 1.2b
Additional information
Power Consumption (Active) | Read/Write: 8.7W/10.6W |
---|---|
Memory Components | V-NAND 3-bit MLC |
Width | 69.85mm |
Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
Form Factor | 2.5" U.2 |
4KB Random Write | Up to 52 000 IOPS |
Max Sequential Read | Up to 3400 MB/s |
Capacity | 1.92TB |
Brand | SamSung |
Depth | 100.20mm |
4KB Random Read | Up to 580 000 IOPS |
Model | MZ-QLB1T9NE |
Series | Samsung 983 DCT |
Features | Advanced ECC Engine and End-to-End Data Protection, Dynamic Thermal Guard Protection, High Quality of Service (QoS), Power-loss protection, S.M.A.R.T., Sustained Performance, U.2 Form Factor and Non-Volatile Memory Express (NVMe), V-NAND Technology |
Cache | Samsung 3GB Low Power DDR4 SDRAM |
Interface | PCIe 3.0 x4 NVMe 1.2b |
Power Consumption (Idle) | Max. 4.0W |
MTBF | 2 000 000 hours |
Application | Server |
Products Status | New |
Max Sequential Write | Up to 2200 MB/s |
Height | 7.00mm |
Weight | 70.00g |
Operating Temperature | 0C ~ +70C |
Controller | Samsung Phoenix Controller |