Samsung 983 Dct Mz-1Lb1t9ne 1.92 Tb Solid State Drive - M.2 Internal

Description

$Quote1 Piece(MOQ)1 Piece(MOQ)

Power Consumption (Active)	Read/Write: 7.6W/8.0W
Memory Components	V-NAND 3-bit MLC
Width	22.00mm
Max Shock Resistance	1 500G & 0.5 ms (Half sine)
Form Factor	M.2 22110
4KB Random Write	Up to 42 000 IOPS
Max Sequential Read	Up to 3000 MB/s
Capacity	1.92TB
Brand	SamSung
Depth	110.20mm
4KB Random Read	Up to 480 000 IOPS
Model	MZ-1LB1T9NE
Series	Samsung 983 DCT
Features	Advanced ECC Engine and End-to-End Data Protection, Dynamic Thermal Guard Protection, High Quality of Service (QoS), Power-loss protection, S.M.A.R.T., Sustained Performance, U.2 Form Factor and Non-Volatile Memory Express (NVMe), V-NAND Technology
Cache	Samsung 3GB Low Power DDR4 SDRAM
Interface	PCIe 3.0 x4 NVMe 1.2b
Power Consumption (Idle)	Max. 2.6W
MTBF	2 000 000 hours
Application	Server
Products Status	New
Max Sequential Write	Up to 1430 MB/s
Height	3.80mm
Weight	20.00g
Operating Temperature	0C ~ +70C
Controller	Samsung Phoenix Controller

Power Consumption (Active)	Read/Write: 7.6W/8.0W
Memory Components	V-NAND 3-bit MLC
Width	22.00mm
Max Shock Resistance	1 500G & 0.5 ms (Half sine)
Form Factor	M.2 22110
4KB Random Write	Up to 42 000 IOPS
Max Sequential Read	Up to 3000 MB/s
Capacity	1.92TB
Brand	SamSung
Depth	110.20mm
4KB Random Read	Up to 480 000 IOPS
Model	MZ-1LB1T9NE
Series	Samsung 983 DCT
Features	Advanced ECC Engine and End-to-End Data Protection, Dynamic Thermal Guard Protection, High Quality of Service (QoS), Power-loss protection, S.M.A.R.T., Sustained Performance, U.2 Form Factor and Non-Volatile Memory Express (NVMe), V-NAND Technology
Cache	Samsung 3GB Low Power DDR4 SDRAM
Interface	PCIe 3.0 x4 NVMe 1.2b
Power Consumption (Idle)	Max. 2.6W
MTBF	2 000 000 hours
Application	Server
Products Status	New
Max Sequential Write	Up to 1430 MB/s
Height	3.80mm
Weight	20.00g
Operating Temperature	0C ~ +70C
Controller	Samsung Phoenix Controller