Additional information
| Power Consumption (Active) | Read: 6.2W, Write: 5.7W |
|---|---|
| Memory Components | Samsung V-NAND 3-bit MLC |
| Width | 22.15mm |
| Form Factor | M.2 2280 |
| 4KB Random Write | QD1: Up to 60 000 IOPS, QD32: Up to 1 000 000 IOPS |
| Storage Temperature | -40C ~ +85C |
| Max Sequential Read | Up to 7000 MB/s |
| Capacity | 1TB |
| Brand | SamSung |
| Used For | Consumer |
| Depth | 80.15mm |
| Encryption | AES 256-bit Full Disk Encryption TCG/Opal V2.0 Encrypted Drive (IEEE1667) |
| 4KB Random Read | QD1: Up to 22 000 IOPS, QD32: Up to 1 000 000 IOPS |
| Model | MZ-V8P1T0B/AM |
| Series | Samsung 980 PRO |
| Cache | 1GB LPDDR4 |
| Interface | PCIe 4.0 x4 NVMe 1.3c |
| Power Consumption (Idle) | 35 mW |
| MTBF | 1 500 000 hours |
| Application | Desktop |
| Device Type | Internal Solid State Drive (SSD) |
| Products Status | New |
| Max Sequential Write | Up to 5000 MB/s |
| Height | 2.38mm |
| Weight | 9.00g |
| Terabytes Written (TBW) | 600TB |
| Operating Temperature | 0C ~ +70C |
| Controller | Samsung |