- M.2 2280
- 512GB
- PCIe Gen 3.0 x4, NVMe 1.3
SAMSUNG 970 PRO M.2 2280 512GB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND 2-bit MLC Internal Solid State Drive (SSD) MZ-V7P512E
$Quote1 Piece(MOQ)1 Piece(MOQ)
Power Consumption (Active) | Average: 5.2W / Maximum: 8.5W (Burst mode) |
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Memory Components | V-NAND 2-bit MLC |
Width | 22.15mm |
Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
Form Factor | M.2 2280 |
4KB Random Write | QD1: 55 000 IOPS, QD32: 500 000 IOPS |
Max Sequential Read | Up to 3500 MB/s |
Capacity | 512GB |
Brand | SamSung |
Used For | Consumer |
Depth | 80.15mm |
4KB Random Read | QD1: 15 000 IOPS, QD32: 370 000 IOPS |
Model | MZ-V7P512E |
Series | Samsung 970 PRO |
Features | Dynamic Thermal Guard, Highly-Efficient Power Management, Non-Volatile Memory Express (NVMe), Professional-Quality Drive Management, SSD Data Security, Thanks to exceptionally low active power consumption you can work efficiently for long periods of time. Device Sleep Mode is also supported for ultra-thin laptop PCs and high-end desktop main boards., This drive includes an AES-256-bit hardware based full disk encryption engine that secures your data without sacrificing performance and is compliant with TCG/OPAL V2.0 and IEEE1667., V-NAND Technology |
Cache | 512MB Low Power DDR4 SDRAM |
Interface | PCIe 3.0 x4 NVMe 1.3 |
Power Consumption (Idle) | 30 mW (max) |
MTBF | 1 500 000 hours |
Application | Desktop |
Device Type | Internal Solid State Drive (SSD) |
Products Status | New |
Max Sequential Write | Up to 2300 MB/s |
Height | 2.38mm |
Weight | 8.00g |
Operating Temperature | 0C ~ +70C |
Controller | Samsung Phoenix |
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