SAMSUNG 970 EVO M.2 2280 2TB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7E2T0E, Bulk

Power Consumption (Active)	Average: 6W / Maximum: 10W (Burst mode)
Memory Components	V-NAND 3-bit MLC
Width	22.15mm
Max Shock Resistance	1 500G & 0.5 ms (Half sine)
Form Factor	M.2 2280
4KB Random Write	QD1: Up to 50 000 IOPS, QD32: Up to 480 000 IOPS
Max Sequential Read	Up to 3500 MB/s
Capacity	2TB
Brand	SamSung
Used For	Consumer
Depth	80.15mm
4KB Random Read	QD1: Up to 15 000 IOPS, QD32: Up to 500 000 IOPS
Model	MZ-V7E2T0E
Series	Samsung 970 EVO
Features	Dynamic Thermal Guard, Non-Volatile Memory Express (NVMe), Professional-Quality Drive Management, Samsung 's intelligent TurboWrite technology helps to maximize your computing ability accelerating write speeds above and beyond the already exceptionally fast speeds of NVMe., SSD Data Security, This drive includes an AES-256-bit hardware based full disk encryption engine that secures your data without sacrificing performance and is compliant with TCG/OPAL V2.0 and IEEE1667., TurboWrite Technology, V-NAND Technology
Cache	2GB Low Power DDR4 SDRAM
Interface	PCIe 3.0 x4 NVMe
Power Consumption (Idle)	30 mW (max)
MTBF	1 500 000 hours
Application	Desktop
Device Type	Internal Solid State Drive (SSD)
Products Status	New
Max Sequential Write	Up to 2500 MB/s
Height	2.38mm
Weight	8.00g
Operating Temperature	0C ~ +70C
Controller	Samsung Phoenix