- M.2 2280
- 1TB
- PCIe Gen 3.0 x4, NVMe 1.3
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SAMSUNG 970 EVO M.2 2280 1TB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7E1T0E
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| Power Consumption (Active) | Average: 6W / Maximum: 10W (Burst mode) |
|---|---|
| Memory Components | V-NAND 3-bit MLC |
| Width | 22.15mm |
| Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
| Form Factor | M.2 2280 |
| 4KB Random Write | QD1: Up to 50 000 IOPS, QD32: Up to 450 000 IOPS |
| Max Sequential Read | Up to 3400 MB/s |
| Capacity | 1TB |
| Brand | SamSung |
| Used For | Consumer |
| Depth | 80.15mm |
| 4KB Random Read | QD1: Up to 15 000 IOPS, QD32: Up to 500 000 IOPS |
| Model | MZ-V7E1T0E |
| Series | Samsung 970 EVO |
| Features | Dynamic Thermal Guard, Non-Volatile Memory Express (NVMe), Professional-Quality Drive Management, Samsung's intelligent TurboWrite technology helps to maximize your computing ability accelerating write speeds above and beyond the already exceptionally fast speeds of NVMe., SSD Data Security, This drive includes an AES-256-bit hardware based full disk encryption engine that secures your data without sacrificing performance and is compliant with TCG/OPAL V2.0 and IEEE1667., TurboWrite Technology, V-NAND Technology |
| Cache | 1GB Low Power DDR4 SDRAM |
| Interface | PCIe 3.0 x4 NVMe 1.3 |
| Power Consumption (Idle) | 30 mW (max) |
| MTBF | 1 500 000 hours |
| Application | Desktop |
| Device Type | Internal Solid State Drive (SSD) |
| Products Status | New |
| Max Sequential Write | Up to 2500 MB/s |
| Height | 2.38mm |
| Weight | 8.00g |
| Operating Temperature | 0C ~ +70C |
| Controller | Samsung Phoenix |
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