- M.2 2280
- 250GB
- PCI-Express 3.0 x4
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SAMSUNG 960 EVO M.2 250GB NVMe PCI-Express 3.0 x4 Internal Solid State Drive (SSD) MZ-V6E250BW
$Quote1 Piece(MOQ)1 Piece(MOQ)
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| Power Consumption (Active) | 5.3W |
|---|---|
| Memory Components | 3D NAND |
| Width | 22.15mm |
| Max Shock Resistance | 1500G duration 0.5m sec 3 axis |
| Form Factor | M.2 2280 |
| 4KB Random Write | Up to 300 000 IOPS (4KB QD32), Up to 50 000 IOPS (4KB QD1) |
| Max Sequential Read | Up to 3200 MB/s |
| Capacity | 250GB |
| Brand | SamSung |
| Used For | Consumer |
| Depth | 80.15mm |
| Encryption | AES 256-bit Encryption (Class 0), TCG/Opal IEEE1667 (Encrypted drive) |
| 4KB Random Read | Up to 14 000 IOPS (4KB QD1), Up to 330 000 IOPS (4KB QD32) |
| Model | MZ-V6E250BW |
| Series | Samsung 960 EVO |
| Features | Device Sleep Mode Support: 5mW (L1.2), Encryption Support: AES 256-bit for User Data Encryption, GC (Garbage Collection): Auto Garbage Collection Algorithm, S.M.A.R.T Support: S.M.A.R.T Supported, TRIM Support: TRIM Supported |
| Cache | 512MB |
| Interface | PCIe 3.0 x4 |
| Power Consumption (Idle) | 1.2W |
| MTBF | 1 500 000 hours |
| Application | Desktop |
| Device Type | Internal Solid State Drive (SSD) |
| Products Status | New |
| Max Sequential Write | Up to 1500 MB/s |
| Height | 2.38mm |
| Weight | 8.00g |
| Operating Temperature | 0C ~ +70C |
| Controller | Samsung Polaris controller |
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