Description
$Quote1 Piece(MOQ)1 Piece(MOQ)
Description
- M.2 2280
- 250GB
- PCI-Express 3.0 x4
Additional information
Power Consumption (Active) | 5.3W |
---|---|
Memory Components | 3D NAND |
Width | 22.15mm |
Max Shock Resistance | 1500G duration 0.5m sec 3 axis |
Form Factor | M.2 2280 |
4KB Random Write | Up to 300 000 IOPS (4KB QD32), Up to 50 000 IOPS (4KB QD1) |
Max Sequential Read | Up to 3200 MB/s |
Capacity | 250GB |
Brand | SamSung |
Used For | Consumer |
Depth | 80.15mm |
Encryption | AES 256-bit Encryption (Class 0), TCG/Opal IEEE1667 (Encrypted drive) |
4KB Random Read | Up to 14 000 IOPS (4KB QD1), Up to 330 000 IOPS (4KB QD32) |
Model | MZ-V6E250BW |
Series | Samsung 960 EVO |
Features | Device Sleep Mode Support: 5mW (L1.2), Encryption Support: AES 256-bit for User Data Encryption, GC (Garbage Collection): Auto Garbage Collection Algorithm, S.M.A.R.T Support: S.M.A.R.T Supported, TRIM Support: TRIM Supported |
Cache | 512MB |
Interface | PCIe 3.0 x4 |
Power Consumption (Idle) | 1.2W |
MTBF | 1 500 000 hours |
Application | Desktop |
Device Type | Internal Solid State Drive (SSD) |
Products Status | New |
Max Sequential Write | Up to 1500 MB/s |
Height | 2.38mm |
Weight | 8.00g |
Operating Temperature | 0C ~ +70C |
Controller | Samsung Polaris controller |