SAMSUNG 860 EVO Series M.2 2280 500GB SATA III V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-N6E500BW

Power Consumption (Active)	Average: 2.5W, Maximum: 4.0W (Burst mode)
Memory Components	V-NAND 3-bit MLC
Width	22.00mm
Max Shock Resistance	1 500G & 0.5 ms (Half sine)
Form Factor	M.2 2280
4KB Random Write	QD1: Up to 42 000 IOPS, QD32: Up to 88 000 IOPS
Storage Temperature	-45C ~ +85C
Max Sequential Read	Up to 550 MB/s
Capacity	500GB
Brand	SamSung
Used For	Consumer
Depth	80.00mm
4KB Random Read	QD1: Up to 10 000 IOPS, QD32: Up to 97 000 IOPS
Model	MZ-N6E500BW
Series	Samsung 860 EVO
Operating Humidity	5% to 95% RH
Features	AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive), Device Sleep Mode Support, GC (Garbage Collection): Auto Garbage Collection Algorithm, S.M.A.R.T. Support, WWN Support: World Wide Name supported
Cache	Samsung 512MB Low Power DDR4 SDRAM
Interface	SATA III
Power Consumption (Idle)	50 mW
Max Vibration Resistance	20G
MTBF	1 500 000 hours
Application	Desktop
Device Type	Internal Solid State Drive (SSD)
Products Status	New
Max Sequential Write	Up to 520 MB/s
Height	2.30mm
Weight	80.00g
Operating Temperature	0C ~ +70C
Controller	Samsung MJX Controller