| Power Consumption (Active) | Average: 3.0W, Maximum: 4.5W (Burst mode) |
|---|---|
| Memory Components | V-NAND 3-bit MLC |
| Width | 22.00mm |
| Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
| Form Factor | M.2 2280 |
| 4KB Random Write | QD1: Up to 42 000 IOPS, QD32: Up to 88 000 IOPS |
| Max Sequential Read | Up to 550 MB/s |
| Capacity | 1TB |
| Brand | SamSung |
| Used For | Consumer |
| Depth | 80.00mm |
| 4KB Random Read | QD1: Up to 10 000 IOPS, QD32: Up to 97 000 IOPS |
| Model | MZ-N6E1T0BW |
| Series | Samsung 860 EVO |
| Features | AES Encryption: AES 256-bit Encryption (Class 0) TCG / Opal IEEE1667 (Encrypted drive), Device Sleep Mode Support: Yes, GC (Garbage Collection): Auto Garbage Collection Algorithm, Management SW: Magician Software for SSD management, S.M.A.R.T. Support: Yes, TBW: 600TB, Trim Support: Yes, WWN Support: World Wide Name supported |
| Cache | 1GB Low Power DDR4 SDRAM |
| Interface | SATA III |
| MTBF | 1 500 000 hours |
| Application | Desktop |
| Device Type | Internal Solid State Drive (SSD) |
| Products Status | New |
| Max Sequential Write | Up to 520 MB/s |
| Height | 2.30mm |
| Weight | 80.00g |
| Operating Temperature | 0C ~ +70C |
| Controller | MJX |
SAMSUNG 860 EVO Series M.2 2280 1TB SATA III V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-N6E1T0BW
SamSung 860EVO 1TB M.2 2280 NVMe SATA 3.0 6Gb/S MZ-N6E1T0BW
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