- INNOVATIVE V-NAND TECHNOLOGY: Powered by Samsung V-NAND Technology, the 860 EVO SSD offers optimized performance for everyday computing as well as rendering large-sized 4K videos and 3D data used by the latest applications
- ENHANCED READ WRITE SPEEDS: Sequential read and write performance levels of up to 550 MB/s and 520 MB/s, respectively; Random Read (4KB, QD32): Up to 97,000 IOPS Random Read
- SECURE ENCRYPTION: Protect data by selecting security options, including AES 256-bit hardware-based encryption compliant with TCG Opal and IEEE 1667
- COMPATIBILITY: Windows 8/Windows 7/Windows Server 2003 (32 bit and 64 bit), Vista (SP1 and above), XP (SP2 and above), MAC OSX and Linux
- INCLUDED CONTENTS: M.2 SATA (6 Gb/s) SSD & User Manual (All other cables, screws, brackets not included); Operating temperature 0 to 70 degree Celsius
SAMSUNG 860 EVO Series M.2 2280 2TB SATA III V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-N6E2T0BW
$Quote1 Pieces ( MOQ )
Brand | SamSung |
---|---|
Products Status | New |
Application | Desktop |
Series | Samsung 860 EVO |
Model | MZ-N6E2T0BW |
Device Type | Internal Solid State Drive (SSD) |
Used For | Consumer |
Form Factor | M.2 2280 |
Capacity | 2TB |
Memory Components | V-NAND 3-bit MLC |
Interface | SATA III |
Controller | MJX |
Cache | Samsung 2GB Low Power DDR4 SDRAM |
Max Sequential Read | Up to 550 MBps |
Max Sequential Write | Up to 520 MBps |
4KB Random Read | 4KB, QD1: Up to 10,000 IOPS, 4KB, QD32: Up to 97,000 IOPS |
4KB Random Write | 4KB, QD1: Up to 42,000 IOPS, 4KB, QD32: Up to 88,000 IOPS |
MTBF | 1,500,000 hours |
Features | 1,200 TBW, AES Encryption: AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive), Device Sleep Mode Support: Yes, GC (Garbage Collection): Auto Garbage Collection Algorithm, Management SW: Magician Software for SSD management, S.M.A.R.T. Support: Yes, Security: AES 256-bit Full Disk Encryption, TCG/Opal V2.0, Encrypted Drive (IEEE1667), Trim Support: Yes, WWN Support: World Wide Name supported |
Power Consumption (Active) | Average: 3.0W, Maximum: 4.5W (Burst mode) |
Operating Temperature | 0°C ~ +70°C |
Max Shock Resistance | 1,500G & 0.5 ms (Half sine) |
Height | 2.30mm |
Width | 22.00mm |
Depth | 80.00mm |
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