SAMSUNG 860 EVO Series M.2 2280 250GB SATA III V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-N6E250BW

Description

$Quote1 Piece(MOQ)1 Piece(MOQ)

INNOVATIVE V-NAND TECHNOLOGY: Powered by Samsung V-NAND Technology, the 860 EVO SSD offers optimized performance for everyday computing as well as rendering large-sized 4K videos and 3D data used by the latest applications
ENHANCED READ WRITE SPEEDS: Sequential read and write performance levels of up to 550 MB/s and 520 MB/s, respectively; Random Read (4KB, QD32): Up to 97,000 IOPS Random Read
SECURE ENCRYPTION: Protect data by selecting security options, including AES 256-bit hardware-based encryption compliant with TCG Opal and IEEE 1667
COMPATIBILITY: Windows 8/Windows 7/Windows Server 2003 (32 bit and 64 bit), Vista (SP1 and above), XP (SP2 and above), MAC OSX and Linux
INCLUDED CONTENTS: M.2 SATA (6 Gb/s) SSD & User Manual (All other cables, screws, brackets not included); Operating temperature 0 to 70 degree Celsius

Power Consumption (Active)	2.2 W
Memory Components	V-NAND 3-bit MLC
Width	22.00mm
Max Shock Resistance	1500G
Form Factor	M.2 2280
4KB Random Write	Random (QD1): Up to 42 000 IOPS; Random (QD32): Up to 88 000 IOPS
Storage Temperature	-45C ~ +85C
Max Sequential Read	Up to 550 MB/s
Capacity	250GB
Brand	SamSung
Used For	Consumer
Depth	80.00mm
4KB Random Read	Random (QD1): Up to 10 000 IOPS; Random (QD32): Up to 97 000 IOPS
Model	MZ-N6E250BW
Series	Samsung 860 EVO
Operating Humidity	5% to 95% RH
Features	1.TBW: 150TB; 2.Data Security: AES 256-bit Full Disk Encryption TCG/Opal V2.0 Encrypted Drive(IEEE1667); 3.Supporting Features: TRIM (Required OS support) Garbage Collection S.M.A.R.T
Cache	0MB
Interface	SATA III
Power Consumption (Idle)	50 mW
Max Vibration Resistance	20G
MTBF	1 500 000 hours
Application	Desktop
Device Type	Internal Solid State Drive (SSD)
Products Status	New
Max Sequential Write	Up to 520 MB/s
Height	2.30mm
Weight	80.00g
Operating Temperature	0C ~ +70C
Controller	MJX

Power Consumption (Active)	2.2 W
Memory Components	V-NAND 3-bit MLC
Width	22.00mm
Max Shock Resistance	1500G
Form Factor	M.2 2280
4KB Random Write	Random (QD1): Up to 42 000 IOPS; Random (QD32): Up to 88 000 IOPS
Storage Temperature	-45C ~ +85C
Max Sequential Read	Up to 550 MB/s
Capacity	250GB
Brand	SamSung
Used For	Consumer
Depth	80.00mm
4KB Random Read	Random (QD1): Up to 10 000 IOPS; Random (QD32): Up to 97 000 IOPS
Model	MZ-N6E250BW
Series	Samsung 860 EVO
Operating Humidity	5% to 95% RH
Features	1.TBW: 150TB; 2.Data Security: AES 256-bit Full Disk Encryption TCG/Opal V2.0 Encrypted Drive(IEEE1667); 3.Supporting Features: TRIM (Required OS support) Garbage Collection S.M.A.R.T
Cache	0MB
Interface	SATA III
Power Consumption (Idle)	50 mW
Max Vibration Resistance	20G
MTBF	1 500 000 hours
Application	Desktop
Device Type	Internal Solid State Drive (SSD)
Products Status	New
Max Sequential Write	Up to 520 MB/s
Height	2.30mm
Weight	80.00g
Operating Temperature	0C ~ +70C
Controller	MJX