- 2.5″
- 4TB
- SATA III
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SAMSUNG 860 EVO Series 2.5″ 4TB SATA III V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-76E4T0B/AM
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| Power Consumption (Active) | Average: 3.0W, Maximum: 4.0W (Burst mode) |
|---|---|
| Memory Components | V-NAND 3-bit MLC |
| Width | 70.00mm |
| Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
| Form Factor | 2.5" |
| 4KB Random Write | Random (QD1): 42 000 IOPS, Random (QD32): 90 000 IOPS |
| Max Sequential Read | Up to 550 MB/s |
| Capacity | 4TB |
| Brand | SamSung |
| Used For | Consumer |
| Depth | 100.00mm |
| 4KB Random Read | Random (QD1): Up to 10 000 IOPS, Random (QD32): Up to 98 000 IOPS |
| Model | MZ-76E4T0B/AM |
| Series | Samsung 860 EVO |
| Features | 2 400 TBW, AES Encryption: AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive), Device Sleep Mode Support: Yes, GC (Garbage Collection): Auto Garbage Collection Algorithm, Management SW: Magician Software for SSD management, S.M.A.R.T. Support: Yes, Security: AES 256-bit Full Disk Encryption TCG/Opal V2.0 Encrypted Drive (IEEE1667), Trim Support: Yes, WWN Support: World Wide Name supported |
| Cache | Samsung 4GB Low Power DDR4 SDRAM |
| Interface | SATA III |
| MTBF | 1 500 000 hours |
| Application | Desktop |
| Device Type | Internal Solid State Drive (SSD) |
| Products Status | New |
| Max Sequential Write | Up to 520 MB/s |
| Height | 7.00mm |
| Weight | 100.00g |
| Operating Temperature | 0C ~ +70C |
| Controller | MJX |
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