- Innovative 3D V-NAND Technology
- Incredible Read/Write Performance
- Enhanced Endurance and Reliability
- M.2 SSD Form Factor for Ultra-thin Laptops and PCs
- Free Download of Samsung Data Migration & Magician software for easy installation and management
SAMSUNG 850 EVO M.2 2280 1TB SATA III 3D NAND Internal Solid State Drive (SSD) MZ-N5E1T0BW
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| Power Consumption (Active) | 2.3W/2.7W (Read/Write) |
|---|---|
| Memory Components | 3D NAND |
| Width | 22.00mm |
| Max Shock Resistance | 1500G |
| Form Factor | M.2 2280 |
| 4KB Random Write | Up to 40 000 IOPS (QD1), Up to 89 000 IOPS (QD32) |
| Storage Temperature | -40C ~ +85C |
| Max Sequential Read | Up to 540 MB/s |
| Capacity | 1TB |
| Brand | SamSung |
| Used For | Consumer |
| Depth | 80.00mm |
| 4KB Random Read | Up to 10 000 IOPS (QD1), Up to 97 000 IOPS (QD32) |
| Model | MZ-N5E1T0BW |
| Series | Samsung 850 EVO |
| Operating Humidity | 5% to 95% RH |
| Interface | SATA III |
| Power Consumption (Idle) | 50mW |
| Max Vibration Resistance | 20G |
| MTBF | 1 500 000 hours |
| Application | Desktop |
| Device Type | Internal Solid State Drive (SSD) |
| Products Status | New |
| Max Sequential Write | Up to 500 MB/s |
| Height | 2.30mm |
| Weight | 40.00g |
| Operating Temperature | 0C ~ +70C |
| Controller | MGX |
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