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SAMSUNG 850 EVO 2.5″ 500GB SATA III V-NAND 3bit MLC Internal Solid State Drive (SSD) MZ-75E500E

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  • 2.5″
  • 500GB
  • SATA III
Power Consumption (Active)

3.1W/3.6W (Average/Max)

Memory Components

V-NAND 3bit MLC

Width

69.85mm

Max Shock Resistance

1500G duration 0.5m sec 3 axis

Form Factor

2.5"

4KB Random Write

Up to 40 000 IOPS (4KB QD1), Up to 90 000 IOPS (4KB QD32)

Storage Temperature

-40C ~ +85C

Max Sequential Read

Up to 540 MB/s

Capacity

500GB

Brand

SamSung

Used For

Consumer

Depth

100.00mm

4KB Random Read

Up to 10 000 IOPS (4KB QD1), Up to 98 000 IOPS (4KB QD32)

Model

MZ-75E500E

Series

Samsung 850 EVO

Operating Humidity

5% to 95% RH

Cache

512MB

Interface

SATA III

Power Consumption (Idle)

70mW

Max Vibration Resistance

20~2000Hz 20G

MTBF

1 500 000 hours

Application

Desktop

Device Type

Internal Solid State Drive (SSD)

Products Status

New

Max Sequential Write

Up to 520 MB/s

Height

6.80mm

Weight

0.12 lb.

Operating Temperature

0C ~ +70C

Controller

Samsung MGX Controller

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