- Innovation V-NAND Technology
- Incredible Read/Write Performance
- Enhanced Endurance and Reliability
- 2.5″ Form Factor Ideal for most current Laptops and Desktop PCs
SAMSUNG 850 EVO 2.5″ 500GB SATA III 32 layer 3D V-NAND Internal Solid State Drive (SSD) MZ-75E500B/AM
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| Power Consumption (Active) | Average: 3.0W, Maximum: 3.5W (Burst mode) |
|---|---|
| Memory Components | 32 layer 3D V-NAND |
| Width | 69.85mm |
| Form Factor | 2.5" |
| 4KB Random Write | Random Write (4KB QD1): Up to 40 000 IOPS, Random Write (4KB QD32): Up to 90 000 IOPS |
| Max Sequential Read | Up to 540 MB/s |
| Capacity | 500GB |
| Brand | SamSung |
| Used For | Consumer |
| Depth | 100.08mm |
| 4KB Random Read | Random Read (4KB QD1): Up to 10 000 IOPS, Random Read (4KB QD32): Up to 98 000 IOPS |
| Model | MZ-75E500B/AM |
| Series | Samsung 850 EVO |
| Cache | 512MB Low Power DDR3 SDRAM |
| Interface | SATA III |
| Power Consumption (Idle) | 50 mW |
| MTBF | 2 000 000 hours |
| Application | Desktop |
| Device Type | Internal Solid State Drive (SSD) |
| Products Status | New |
| Max Sequential Write | Up to 520 MB/s |
| Height | 6.86mm |
| Operating Temperature | 0C ~ +70C |
| Controller | Samsung MGX Controller |
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