- Innovation V-NAND Technology
- Incredible Read/Write Performance
- Enhanced Endurance and Reliability
- 2.5″ Form Factor Ideal for most current Laptops and Desktop PCs
- Free Download of Samsung Data Migration & Magician software for easy installation and management
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SAMSUNG 850 EVO 2.5″ 4TB SATA III 3D NAND Internal Solid State Drive (SSD) MZ-75E4T0B/AM
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| Power Consumption (Active) | 3.1W/3.6W (Read/Write) |
|---|---|
| Memory Components | 3D NAND |
| Width | 69.85mm |
| Max Shock Resistance | Non-Operating: 1500G duration 0.5m sec 3 axis |
| Form Factor | 2.5" |
| 4KB Random Write | Up to 40 000 IOPS (QD1), Up to 90 000 IOPS (QD32) |
| Storage Temperature | -40C ~ +85C |
| Max Sequential Read | Up to 540 MB/s |
| Capacity | 4TB |
| Brand | SamSung |
| Used For | Consumer |
| Depth | 100.00mm |
| 4KB Random Read | Up to 10 000 IOPS (QD1), Up to 98 000 IOPS (QD32) |
| Model | MZ-75E4T0B/AM |
| Series | Samsung 850 EVO |
| Operating Humidity | 5% to 95% RH |
| Cache | 4GB |
| Interface | SATA III |
| Power Consumption (Idle) | 70mW |
| Max Vibration Resistance | Non-Operating: 20~2000Hz 20G |
| MTBF | 1 500 000 hours |
| Application | Desktop |
| Device Type | Internal Solid State Drive (SSD) |
| Products Status | New |
| Max Sequential Write | Up to 520 MB/s |
| Height | 6.80mm |
| Weight | 55.00g |
| Operating Temperature | 0C ~ +70C |
| Controller | MHX |
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