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Intel 660p Series M.2 2280 512GB PCIe 3.0 x4, NVMe 3D2 QLC Internal Solid State Drive (SSD) SSDPEKNW512G8X1

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Description

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Description

  • Form Factor: M.2 22 x 80mm
  • Interface: PCI Express NVMe 3.0 x4
  • Performance: Sequential Read (up to) 1500 MB/s, Random Read (8GB Span): Up to 90,000 IOPS. Sequential Write (up to) 1000 MB/s, Random Write (8GB Span): Up to 220,000 IOPS
  • PCIe Performance at an Affordable Price – Empowered by Intel’s innovative Intel QLC Technology, the Intel SSD 660p offers higher capacities at a lower cost than TLC-based options. With PCIe, the new SSD 660p skips SATA and its limitations to offer up to 2TB in one drive
  • Twice the Capacity in Identical Footprints – These client SSDs pack more data than TLC-based storage, allowing up to 2x more capacity in identical footprints. The thin M.2 80mm form factor makes it perfect for notebooks, desktops, and mobile devices that need storage for everyday computing
  • Performance and Price That Matters – The SSD 660p hits the marks that matter for client SSDs

Additional information

Power Consumption (Active)

100 mW

Memory Components

3D2 QLC

Width

22.00mm

Max Shock Resistance

1000G

Form Factor

M.2 2280

4KB Random Write

Up to 220 000 IOPS

Storage Temperature

-55C ~ +95C

Max Sequential Read

Up to 1500 MB/s

Capacity

512GB

Brand

Intel

Used For

Consumer

Depth

80.00mm

4KB Random Read

Up to 90 000 IOPS

Model

SSDPEKNW512G8X1

Series

Intel 660p

Operating Humidity

5-95%

Features

Compared to TLC's capacity Intel 3D NAND QLC technology stores more bits per cell allowing for higher capacity faster read performance and lower power consumption per drive., Empowered by Intel's innovative Intel's 3D NAND QLC technology this SSD offers higher capacities at a lower cost than TLC-based storages., Endurance Rating (Lifetime Writes): 100 TBW, This technology makes the most of small spaces by expanding capacities up to 2TB of storage on small M.2 form factor.

Interface

PCIe 3.0 x4 NVMe

Power Consumption (Idle)

40 mW

Max Vibration Resistance

Non-Operating: 3.13 GRMS (5-800 Hz), Operating: 2.17 GRMS (5-700 Hz)

MTBF

1 600 000 hours

Application

Desktop

Device Type

Internal Solid State Drive (SSD)

Products Status

New

Max Sequential Write

Up to 1000 MB/s

Height

2.38mm

Weight

< 10.00g

Terabytes Written (TBW)

100TB

Operating Temperature

0C ~ +70C

Additional information

Power Consumption (Active)

100 mW

Memory Components

3D2 QLC

Width

22.00mm

Max Shock Resistance

1000G

Form Factor

M.2 2280

4KB Random Write

Up to 220 000 IOPS

Storage Temperature

-55C ~ +95C

Max Sequential Read

Up to 1500 MB/s

Capacity

512GB

Brand

Intel

Used For

Consumer

Depth

80.00mm

4KB Random Read

Up to 90 000 IOPS

Model

SSDPEKNW512G8X1

Series

Intel 660p

Operating Humidity

5-95%

Features

Compared to TLC's capacity Intel 3D NAND QLC technology stores more bits per cell allowing for higher capacity faster read performance and lower power consumption per drive., Empowered by Intel's innovative Intel's 3D NAND QLC technology this SSD offers higher capacities at a lower cost than TLC-based storages., Endurance Rating (Lifetime Writes): 100 TBW, This technology makes the most of small spaces by expanding capacities up to 2TB of storage on small M.2 form factor.

Interface

PCIe 3.0 x4 NVMe

Power Consumption (Idle)

40 mW

Max Vibration Resistance

Non-Operating: 3.13 GRMS (5-800 Hz), Operating: 2.17 GRMS (5-700 Hz)

MTBF

1 600 000 hours

Application

Desktop

Device Type

Internal Solid State Drive (SSD)

Products Status

New

Max Sequential Write

Up to 1000 MB/s

Height

2.38mm

Weight

< 10.00g

Terabytes Written (TBW)

100TB

Operating Temperature

0C ~ +70C

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