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SAMSUNG 970 EVO M.2 2280 500GB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7E500E

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  • M.2 2280
  • 500GB
  • PCIe Gen 3.0 x4, NVMe 1.3
Power Consumption (Active)

Average: 5.7W / Maximum: 10W (Burst mode)

Memory Components

V-NAND 3-bit MLC

Width

22.15mm

Max Shock Resistance

1 500G & 0.5 ms (Half sine)

Form Factor

M.2 2280

4KB Random Write

QD1: Up to 50 000 IOPS, QD32: Up to 450 000 IOPS

Max Sequential Read

Up to 3400 MB/s

Capacity

500GB

Brand

SamSung

Used For

Consumer

Depth

80.15mm

4KB Random Read

QD1: Up to 15 000 IOPS, QD32: Up to 370 000 IOPS

Model

MZ-V7E500E

Series

Samsung 970 EVO

Features

Dynamic Thermal Guard, Non-Volatile Memory Express (NVMe), Professional-Quality Drive Management, Samsung's intelligent TurboWrite technology helps to maximize your computing ability accelerating write speeds above and beyond the already exceptionally fast speeds of NVMe., SSD Data Security, This drive includes an AES-256-bit hardware based full disk encryption engine that secures your data without sacrificing performance and is compliant with TCG/OPAL V2.0 and IEEE1667., TurboWrite Technology, V-NAND Technology

Cache

512MB Low Power DDR4 SDRAM

Interface

PCIe 3.0 x4 NVMe 1.3

Power Consumption (Idle)

30 mW (max)

MTBF

1 500 000 hours

Application

Desktop

Device Type

Internal Solid State Drive (SSD)

Products Status

New

Max Sequential Write

Up to 2300 MB/s

Height

2.38mm

Weight

8.00g

Operating Temperature

0C ~ +70C

Controller

Samsung Phoenix

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