- M.2 2280
- 500GB
- PCIe Gen 3.0 x4, NVMe 1.3
SAMSUNG 970 EVO M.2 2280 500GB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V7E500E
$Quote1 Pieces ( MOQ )
![](https://centurytech.sg/wp-content/uploads/2023/12/paypal.png)
![](https://centurytech.sg/wp-content/uploads/2023/12/tt.png)
![](https://centurytech.sg/wp-content/uploads/2023/12/dhl.png)
Brand | SamSung |
---|---|
Products Status | New |
Application | Desktop |
Series | Samsung 970 EVO |
Model | MZ-V7E500E |
Device Type | Internal Solid State Drive (SSD) |
Used For | Consumer |
Form Factor | M.2 2280 |
Capacity | 500GB |
Memory Components | V-NAND 3-bit MLC |
Interface | PCIe Gen 3.0 x4, NVMe 1.3 |
Controller | Samsung Phoenix |
Cache | 512MB Low Power DDR4 SDRAM |
Max Sequential Read | Up to 3400 MBps |
Max Sequential Write | Up to 2300 MBps |
4KB Random Read | QD1: Up to 15,000 IOPS, QD32: Up to 370,000 IOPS |
4KB Random Write | QD1: Up to 50,000 IOPS, QD32: Up to 450,000 IOPS |
MTBF | 1,500,000 hours |
Features | Dynamic Thermal Guard, Non-Volatile Memory Express (NVMe), Professional-Quality Drive Management, Samsung's intelligent TurboWrite technology helps to maximize your computing ability, accelerating write speeds above and beyond the already exceptionally fast speeds of NVMe., SSD Data Security, This drive includes an AES-256-bit hardware based, full disk encryption engine that secures your data without sacrificing performance and is compliant with TCG/OPAL V2.0 and IEEE1667., TurboWrite Technology, V-NAND Technology |
Power Consumption (Idle) | 30 mW (max) |
Power Consumption (Active) | Average: 5.7W / Maximum: 10W (Burst mode) |
Operating Temperature | 0°C ~ +70°C |
Max Shock Resistance | 1,500G & 0.5 ms (Half sine) |
Height | 2.38mm |
Width | 22.15mm |
Depth | 80.15mm |
Weight | 8.00g |
Submit Inquiry
Buy more, save more. Contact us for exclusive discounts!