SAMSUNG 970 PRO M.2 2280 512GB PCIe Gen3. x4 , NVMe 1.3 64L V-NAND 2-bit MLC Internal Solid State Drive (SSD) MZ-V7P512BW
SAMSUNG 970 PRO M.2 2280 512GB PCIe Gen3. x4 , NVMe 1.3 64L V-NAND 2-bit MLC Internal Solid State Drive (SSD) MZ-V7P512BW
SAMSUNG 970 PRO M.2 2280 512GB PCIe Gen3. x4 , NVMe 1.3 64L V-NAND 2-bit MLC Internal Solid State Drive (SSD) MZ-V7P512BW
SAMSUNG 970 PRO M.2 2280 512GB PCIe Gen3. x4 , NVMe 1.3 64L V-NAND 2-bit MLC Internal Solid State Drive (SSD) MZ-V7P512BW
SAMSUNG 970 PRO M.2 2280 512GB PCIe Gen3. x4 , NVMe 1.3 64L V-NAND 2-bit MLC Internal Solid State Drive (SSD) MZ-V7P512BW
SAMSUNG 970 PRO M.2 2280 512GB PCIe Gen3. x4 , NVMe 1.3 64L V-NAND 2-bit MLC Internal Solid State Drive (SSD) MZ-V7P512BW
SAMSUNG 970 PRO M.2 2280 512GB PCIe Gen3. x4 , NVMe 1.3 64L V-NAND 2-bit MLC Internal Solid State Drive (SSD) MZ-V7P512BW
SAMSUNG 970 PRO M.2 2280 512GB PCIe Gen3. x4 , NVMe 1.3 64L V-NAND 2-bit MLC Internal Solid State Drive (SSD) MZ-V7P512BW

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SAMSUNG 970 PRO M.2 2280 512GB PCIe Gen3. x4 , NVMe 1.3 64L V-NAND 2-bit MLC Internal Solid State Drive (SSD) MZ-V7P512BW

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  • INNOVATIVE V-NAND TECHNOLOGY: Powered by Samsung V-NAND Technology, the 970 PRO SSD’s NVMe interface (PCIe Gen 3.0 x4 NVMe 1.3) offers enhanced bandwidth, low latency, and power efficiency ideal for tech enthusiasts, high end gamers, and 4K & 3D content designers
  • BREAKTHROUGH READ WRITE SPEEDS: Sequential read and write performance levels of up to 3,500 MB/s and 2,300 MB/s, respectively; Random Read (4KB, QD32): Up to 370,000 IOPS Random Read
  • PERFORMANCE OPTIMIZATION AND DATA SECURITY: Seamless cloning and file transfers with Samsung Magician Software, the ideal SSD management solution for performance optimization and data security with automatic firmware updates
  • SUPERIOR HEAT DISSIPATION: Samsung’s Dynamic Thermal Guard automatically monitors and maintains optimal operating temperatures to minimize performance drops
  • 600 TBW (Terabytes Written)
Power Consumption (Active)

Average: 5.2W, Maximum: 8.5W (Burst mode)
Memory Components

64L V-NAND MLC
Width

22.10mm
Max Shock Resistance

1 500G & 0.5 ms (Half sine)
Form Factor

M.2 2280
4KB Random Write

QD1: Up to 55 000 IOPS, QD32: Up to 500 000 IOPS
Max Sequential Read

Up to 3500 MB/s
Capacity

512GB
Brand

SamSung
Used For

Consumer
Depth

80.26mm
4KB Random Read

QD1: Up to 15 000 IOPS, QD32: Up to 370 000 IOPS
Model

MZ-V7P512BW
Series

Samsung 970 PRO
Cache

512MB LPDDR4 DRAM
Interface

PCIe 3.0×4 NVMe 1.3
Power Consumption (Idle)

Max. 30 mW
MTBF

1 500 000 hours
Application

Desktop
Device Type

Internal Solid State Drive (SSD)
Products Status

New
Max Sequential Write

Up to 2300 MB/s
Height

2.30mm
Weight

7.94g
Operating Temperature

0C ~ +70C
Controller

Samsung Phoenix Controller

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