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SAMSUNG 860 EVO Series 2.5″ 1TB SATA III V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-76E1T0B/AM

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  • 2.5″
  • 1TB
  • SATA III
Power Consumption (Active)

Average: 3.0W, Maximum: 4.0W (Burst mode)

Memory Components

V-NAND 3-bit MLC

Width

70.00mm

Max Shock Resistance

1 500G & 0.5 ms (Half sine)

Form Factor

2.5"

4KB Random Write

Random (QD1): Up to 42 000 IOPS, Random (QD32): Up to 90 000 IOPS

Max Sequential Read

Up to 550 MB/s

Capacity

1TB

Brand

SamSung

Used For

Consumer

Depth

100.00mm

4KB Random Read

Random (QD1): Up to 10 000 IOPS, Random (QD32): Up to 98 000 IOPS

Model

MZ-76E1T0B/AM

Series

Samsung 860 EVO

Cache

Samsung 1GB Low Power DDR4 SDRAM

Interface

SATA III

MTBF

1 500 000 hours

Application

Desktop

Device Type

Internal Solid State Drive (SSD)

Products Status

New

Max Sequential Write

Up to 520 MB/s

Height

7.00mm

Weight

86.18g

Operating Temperature

0C ~ +70C

Controller

Samsung MJX

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