| Power Consumption (Active) | Average: 3.7W, Maximum: 5.6W (Burst mode) |
|---|---|
| Memory Components | V-NAND 3-bit MLC |
| Width | 22.15mm |
| Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
| Form Factor | M.2 2280 |
| 4KB Random Write | QD1: 53 000 IOPS, QD32: 320 000 IOPS |
| Max Sequential Read | Up to 2900 MB/s |
| Capacity | 250GB |
| Brand | SamSung |
| Used For | Consumer |
| Depth | 80.15mm |
| 4KB Random Read | QD1: 17 000 IOPS, QD32: 230 000 IOPS |
| Model | MZ-V8V250BW |
| Series | Samsung 980 |
| Features | 150 TBW, Device Sleep Mode Support: Yes, Encryption Support: AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive), GC (Garbage Collection): Auto Garbage Collection Algorithm, S.M.A.R.T Support: Supported, TRIM Support: Supported |
| Interface | PCIe 3.0 x4 NVMe 1.4 |
| Power Consumption (Idle) | 45 mW |
| MTBF | 1 500 000 hours |
| Application | Desktop |
| Device Type | Internal Solid State Drive (SSD) |
| Products Status | New |
| Max Sequential Write | Up to 1300 MB/s |
| Height | 2.38mm |
| Weight | 8.00g |
| Operating Temperature | 0C ~ +70C |
| Controller | Pablo |
* NOTE: Image may not exactly match the product
SAMSUNG 980 M.2 2280 250GB PCI-Express 3.0 x4, NVMe 1.4 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V8V250BW
SamSung 980 250GB M.2 2280 NVMe PCIe 4.0 x4 MZ-V8V250BW
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